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FSX - UK2000 Heathrow Xtreme V3 With UpdateFSX - UK2000 Heathrow Xtreme V3 With Update.epub FSX - UK2000 Heathrow Xtreme V3 With UpdateFSX - UK2000 Heathrow Xtreme V3 With Update.epub Home:3125.en.FR.Stephen.Capillo.C.Huckleberry.Hands.X - UK2000.Hempingen.V2.RTF. bd9e74395d. FSX – UK2000 Heathrow Xtreme V3 with updateFSX – UK2000 Heathrow Xtreme V3 with update.epubThis invention relates to the manufacture of semiconductor devices, and more specifically to metal oxide semiconductor field effect transistors (MOSFETs) fabricated in a boron doped substrate. While boron doped substrate, sometimes referred to as boron epitaxial, has been used in the manufacture of metal oxide semiconductor field effect transistors (MOSFETs), the relationship between impurity content in the channel region and the characteristics of the transistor has not been fully understood. Such understanding may be important for those fabricating certain device types, such as MOSFETs, that are not feasible with boron doped substrates. For example, it is possible to form an N-channel MOSFET on a boron doped substrate, such as the epitaxial silicon of gallium arsenide (GaAs). Such a device is called a GaAs NMOSFET, or GaAs NFET. A GaAs PMOSFET, or GaAs PFET is then obtained by the complimentary process. With boron doping of the substrate, the depletion region in the substrate tends to be very thin, making the device body very shallow. As a result, the threshold voltage is relatively low, and the overdrive ability is also relatively low. However, a GaAs NFET has a higher source resistance than a GaAs PFET, because the source is composed of epitaxial silicon, rather than a diffusion. A metal-semiconductor Schottky junction is formed at the surface of the epitaxial source. This invention is a semiconductor device, such as a field effect transistor, fabricated in a boron doped substrate having a layer of N.sup.+ dopant diffused into a portion of the

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